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  Datasheet File OCR Text:
 SMD Type
N-Channel Enhancement Mode Field Effect Transistor KO3402(AO3402)
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
MOSFET IC
Unit: mm
Features
+0.1 2.4-0.1
1
2
+0.1 0.95-0.1 +0.1 1.9-0.1
RDS(ON) RDS(ON) RDS(ON)
55m 70m 110m
(VGS = 10V) (VGS = 4.5V) (VGS = 2.5V)
0.55
ID = 4 A
+0.1 1.3-0.1
VDS (V) = 30V
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 1. Gate 2.Emitter 2. Source
+0.1 0.38-0.1
0-0.1
3. Drain 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25 TA=70 Pulsed Drain Current Power Dissipation TA=25 TA=70 Thermal Resistance.Junction-to-Ambient Thermal Resistance.Junction-to-Case Junction and Storage Temperature Range R R
JA JC
Symbol VDS VGS ID IDM PD
Rating 30 12 4 3.4 15 1.4 1 125 80 -55 to 150
Unit V V
A
W /W /W
TJ, TSTG
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1
SMD Type
KO3402(AO3402)
Electrical Characteristics Ta = 25
Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Symbol VDSS IDSS IGSS VGS(th) ID=250 Testconditons A, VGS=0V Min 30
IC MOSFET
Typ
Max
Unit V
VDS=24V, VGS=0V VDS=24V, VGS=0V ,TJ=55 VDS=0V, VGS= VDS=VGS ID=250 VGS=10V, ID=4A 12V A 0.6 1 45 TJ=125 66 55 83 10 8 390 VGS=0V, VDS=15V, f=1MHz 54.5 41 VGS=0V, VDS=0V, f=1MHz 3 4.34 VGS=4.5V, VDS=15V, ID=-4A 0.6 1.38 3.3 VGS=10V, VDS=15V, RL=3.75 ,RGEN=6 1 21.7 2.1 IF=4A, dI/dt=100A/ IF=4A, dI/dt=100A/ s s 12 6.3
1 A 5 100 1.4 55 80 70 110 m m A S pF pF pF nA V m
Static Drain-Source On-Resistance
RDS(ON)
VGS=10V, ID=4A VGS=4.5V, ID=3A VGS=2.5V, ID=2A
On state drain current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Maximum Body-Diode Continuous Current Diode Forward Voltage
ID(ON) gFS Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr IS VSD
VGS=4.5V, VDS=5V VDS=5V, ID=4A
nC nC nC ns ns ns ns ns nC 2.5 A V
IS=1A,VGS=0V
0.8
1
2
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